MS1202 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. description: the MS1202 is a epitaxial silicon npn transistor designed for 12.5 volt class c applications in the 118 ? 136 mhz frequency band and 28 volt fm ground station applications. gold metalization and emitter ballast resistors provide long term product ruggedness and reliability. absolute maximum ratings (tcase = 25 c) s y mbol parameter v alue unit v cbo collector - base voltage 65 v v ceo collector - emitter voltage 35 v v ebo emitter - base voltage 4.0 v p diss device dissipation 15 w t j junction temperature 200 c i c device current 1.0 a t stg storage temperature -65 to +200 o c thermal data r th(j-c) thermal resistance junction-case 11.7 c/w rev a january 2009 features ? 175 mhz ? 12.5 volts ? p out = 7.0 w ? g p = 8.4 db minimum ? common emitter configuration rf & microwave transistors fm mobile applications
MS1202 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. electrical specifications (tcase = 25 c) static v alue symbol test conditions min. t yp . max. unit bv ces i c = 200 ma v be = 0 ma 65 --- --- v bv ceo i c = 200 ma i b =0 35 --- --- v bv ebo i e = 5 ma i c = 0 ma 4 --- --- v i cbo v cb = 30 v i e = 0 ma --- --- 1.0 ma h fe v ce = 5 v i c = 100 ma 5 --- 150 --- dynamic v alue symbol test conditions min. t yp . max. unit p out f =175 mhz v ce =28v 7.0 --- --- w g p f =175 mhz v ce =28v 8.4 --- --- db c f =175 mhz v ce =28v 60 % cob f =1 mhz v ce =30v --- --- 15 pf
MS1202 microsemi reserves the right to c hange, without notice, the specificati ons and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. package mechanical data
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